? semiconductor components industries, llc, 2005 september, 2005 ? rev. 10 1 publication order number: TIP31a/d TIP31, TIP31a, TIP31b, TIP31c, (npn), tip32, tip32a, tip32b, tip32c, (pnp) complementary silicon plastic power transistors designed for use in general purpose amplifier and switching applications. features ? collector?emitter saturation voltage ? v ce(sat) = 1.2 vdc (max) @ i c = 3.0 adc ? collector?emitter sustaining voltage ? v ceo(sus) = 40 vdc (min) ? TIP31, tip32 = 60 vdc (min) ? TIP31a, tip32a = 80 vdc (min) ? TIP31b, tip32b = 100 vdc (min) ? TIP31c, tip32c ? high current gain ? bandwidth product f t = 3.0 mhz (min) @ i c = 500 madc ? compact to?220 ab package ? pb?free packages are available* maximum ratings rating symbol value unit ???????????? ? ?????????? ? ? ?????????? ? ???????????? collector ? emitter voltage TIP31, tip32 TIP31a, tip32a TIP31b, tip32b TIP31c, tip32c ???? ? ?? ? ? ?? ? ???? v ceo ??? ? ? ? ? ? ? ??? 40 60 80 100 ??? ? ? ? ? ? ? ??? vdc ???????????? ? ?????????? ? ???????????? collector?base voltage TIP31, tip32 TIP31a, tip32a TIP31b, tip32b TIP31c, tip32c ???? ? ?? ? ???? v cb ??? ? ? ? ??? 40 60 80 100 ??? ? ? ? ??? vdc ???????????? ???????????? ???? ???? ??? ??? ??? ??? ???????????? ? ?????????? ? ???????????? collector current continuous peak ???? ? ?? ? ???? i c ??? ? ? ? ??? 3.0 5.0 ??? ? ? ? ??? adc ???????????? ???????????? ???? ???? ??? ??? ??? ??? ???????????? ? ?????????? ? ???????????? total power dissipation @ t c = 25 c derate above 25 c ???? ? ?? ? ???? p d ??? ? ? ? ??? 40 0.32 ??? ? ? ? ??? w w/ c ???????????? ? ?????????? ? ???????????? total power dissipation @ t a = 25 c derate above 25 c ???? ? ?? ? ???? p d ??? ? ? ? ??? 2.0 0.016 ??? ? ? ? ??? w w/ c ???????????? ???????????? ???? ???? ??? ??? ??? ??? ???????????? ? ?????????? ? ???????????? operating and storage junction temperature range ???? ? ?? ? ???? t j , t stg ??? ? ? ? ??? ? 65 to + 150 ??? ? ? ? ??? c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. i c = 1.8 a, l = 20 mh, p.r.f. = 10 hz, v cc = 10 v, r be = 100 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. to?220ab case 221a style 1 marking diagram 3 ampere power transistors complementary silicon 40?60?80?100 volts, 40 watts http://onsemi.com 1 2 3 4 tip3xx = device code xx = 1, 1a, 1b, 1c, 2, 2a, 2b, 2c, a = assembly location y = year ww = work week g pb?free package tip3xxg ayww see detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ordering information
TIP31, TIP31a, TIP31b, TIP31c, (npn), tip32, tip32a, tip32b, tip32c, (pnp) http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? ??????????????????????? ??????????????????????? ???? ???? ?????? ?????? ??? ??? ??????????????????????? ??????????????????????? thermal resistance, junction?to?ambient ???? ???? ja ?????? ?????? ??? ??? c/w ??????????????????????? ??????????????????????? ???? ???? jc ?????? ?????? ??? ??? c/w ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ??????????????????????? ??????????????????????? characteristic ???? ???? ???? ???? ??? ??? ??? ??? ????????????????????????????????? ??????????????????????? ? ????????????????????? ? ? ????????????????????? ? ??????????????????????? collector?emitter sustaining voltage (note 2) TIP31, tip32 (i c = 30 madc, i b = 0) TIP31a, tip32a TIP31b, tip32b TIP31c, tip32c ???? ? ?? ? ? ?? ? ???? v ceo(sus) ???? ? ?? ? ? ?? ? ???? 40 60 80 100 ??? ? ? ? ? ? ? ??? ? ? ? ? ??? ? ? ? ? ? ? ??? vdc ??????????????????????? ??????????????????????? ???? ???? ???? ???? ??? ??? ??? ??? ??????????????????????? ??????????????????????? ???? ???? ???? ???? ??? ??? ??? ??? ??????????????????????? ? ????????????????????? ? ? ????????????????????? ? ? ????????????????????? ? ??????????????????????? collector cutoff current (v ce = 40 vdc, v eb = 0) TIP31, tip32 (v ce = 60 vdc, v eb = 0) TIP31a, tip32a (v ce = 80 vdc, v eb = 0) TIP31b, tip32b (v ce = 100 vdc, v eb = 0) TIP31c, tip32c ???? ? ?? ? ? ?? ? ? ?? ? ???? i ces ???? ? ?? ? ? ?? ? ? ?? ? ???? ? ? ? ? ??? ? ? ? ? ? ? ? ? ? ??? 200 200 200 200 ??? ? ? ? ? ? ? ? ? ? ??? adc ??????????????????????? ??????????????????????? ???? ???? ???? ???? ??? ??? ??? ??? ????????????????????????????????? on characteristics (note 2) ??????????????????????? ? ????????????????????? ? ??????????????????????? dc current gain (i c = 1.0 adc, v ce = 4.0 vdc) dc current gain (i c = 3.0 adc, v ce = 4.0 vdc) ???? ? ?? ? ???? h fe ???? ? ?? ? ???? 25 10 ??? ? ? ? ??? ? 50 ??? ? ? ? ??? ? ??????????????????????? ??????????????????????? ???? ???? ???? ???? ??? ??? ??? ??? ??????????????????????? ??????????????????????? ???? ???? ???? ???? ??? ??? ??? ??? ????????????????????????????????? ????????????????????????????????? dynamic characteristics ??????????????????????? current?gain ? bandwidth product (i c = 500 madc, v ce = 10 vdc, f test = 1.0 mhz) ???? ???? ??? ??? ??????????????????????? ??????????????????????? ???? ???? ???? ???? ??? ??? ??? ??? 300 s, duty cycle 2.0%. ordering information device package shipping TIP31 to?220 50 units / rail TIP31g to?220 (pb?free) 50 units / rail TIP31a to?220 50 units / rail TIP31ag to?220 (pb?free) 50 units / rail TIP31b to?220 50 units / rail TIP31bg to?220 (pb?free) 50 units / rail TIP31c to?220 50 units / rail TIP31cg to?220 (pb?free) 50 units / rail tip32 to?220 50 units / rail tip32g to?220 (pb?free) 50 units / rail tip32a to?220 50 units / rail tip32ag to?220 (pb?free) 50 units / rail tip32b to?220 50 units / rail tip32bg to?220 (pb?free) 50 units / rail tip32c to?220 50 units / rail tip32cg to?220 (pb?free) 50 units / rail
TIP31, TIP31a, TIP31b, TIP31c, (npn), tip32, tip32a, tip32b, tip32c, (pnp) http://onsemi.com 3 figure 1. power derating t, temperature ( c) 0 100 0 1.0 160 2.0 3.0 60 80 40 140 4.0 turn?on pulse approx +11 v v in 0 v eb(off) t 1 approx +11 v v in t 2 turn?off pulse t 3 t 1 7.0 ns 100 < t 2 < 500 s t 3 < 15 ns duty cycle 2.0% approx ? 9.0 v r b and r c varied to obtain desired current levels. scope r c r b v cc v in c jd << c eb ?4.0 v figure 2. switching time equivalent circuit 0.03 figure 3. turn?on time i c , collector current (amp) 0.02 0.1 3. 0 0.07 1.0 1.0 i c /i b = 10 t j = 25 c t r @ v cc = 10 v 0.5 0.3 0.1 0.05 0.05 0.3 0.5 t d @ v eb(off) = 2.0 v 0.03 0.7 2.0 t r @ v cc = 30 v 20 120 t c t a 0 10 20 30 40 t c t a p d , power dissipation (watts) t, time ( s)
TIP31, TIP31a, TIP31b, TIP31c, (npn), tip32, tip32a, tip32b, tip32c, (pnp) http://onsemi.com 4 t, time (ms) 1.0 0.01 0.01 0.1 r(t), transient thermal resistance (normalized) 1.0 1.0 100 z jc(t) = r(t) r jc r jc (t) = 3.125 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) ? t c = p (pk) z jc(t) p (pk) t 1 t 2 single pulse 1.0 k d = 0.5 0.05 duty cycle, d = t 1 /t 2 figure 4. thermal response 0.1 0.05 0.03 0.02 0.07 0.5 0.3 0.2 0.7 0.02 0.05 0.2 0.5 2.0 5.0 200 500 10 20 50 0.2 0.02 0.01 v ce , collector?emitter voltage (volts) 10 20 5.0 50 100 figure 5. active region safe operating area 0.2 0.1 0.5 secondary breakdown limited @ t j 150 c thermal limit @ t c = 25 c (single pulse) bonding wire limit 1.0ms 100 s 2.0 1.0 10 5.0 i c , collector current (amp) 5.0ms curves apply below rated v ceo TIP31a, tip32a TIP31b, tip32b TIP31c, tip32c there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 5 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 4. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 0.05 0.1 0.2 0.7 0.03 0.3 0.5 0.07 i c , collector current (amp) figure 6. turn?off time 3.0 t, time (s) 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 1.0 2.0 3.0 0.2 0.5 1.0 5.0 0.1 2.0 3.0 0.3 v r , reverse voltage (volts) figure 7. capacitance 300 capacitance (pf) 200 100 70 50 30 10 20 40 30 t f @ v cc = 30 v t f @ v cc = 10 v t s i b1 = i b2 i c /i b = 10 t s = t s ? 1/8 t f t j = 25 c t j = +25 c c eb c cb
TIP31, TIP31a, TIP31b, TIP31c, (npn), tip32, tip32a, tip32b, tip32c, (pnp) http://onsemi.com 5 v ce , collector?emitter voltage (volts ) t j , junction temperature ( c) 10 3 ?0.4 10 1 10 0 10 ?2 10 2 10 ?1 10 ?3 10 7 10 5 10 4 10 2 10 6 10 3 i b , base current (ma) i c , collector current (amp) h fe , dc current gain figure 8. dc current gain figure 9. collector saturation region i c , collector current (amp) 300 500 0.05 0.07 0.3 3.0 0.03 100 70 50 30 10 7.0 0.1 v be , base?emitter voltage (volts) figure 10. ?on? voltages v ce = 2.0 v 5.0 0.7 1.0 0.5 1.6 2.0 2.0 5.0 20 1000 1.0 0.8 0.4 10 0 100 200 500 50 25 c t j = 150 c ?55 c 1.2 1.4 0.003 i c , collector current (amps) 1.0 0.8 0.4 1.2 0.6 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 +2.5 i c = 0.3 a 20 60 80 100 120 160 140 40 v, voltage (volts) t j = 25 c 1.0 a 3.0 a 0.2 0.3 0.5 1.0 2.0 3.0 t j = 25 c v be(sat) @ i c /i b = 10 v be @ v ce = 2.0 v v ce(sat) @ i c /i b = 10 v , temperature coefficients (mv/ c) +2.0 +1.5 +1.0 +0.5 0 ?0.5 ?1.0 ?1.5 ?2.0 ?2.5 0.003 0.005 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 *applies for i c /i b h fe /2 t j = ?65 c to +150 c * vc for v ce(sat) vb for v be figure 11. temperature coefficients , collector current (a) i c ?0.3 ?0.2 ?0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6 figure 12. collector cut?off region figure 13. effects of base?emitter resistance v ce = 30 v t j = 150 c 100 c 25 c reverse forward i ces r be , external base?emitter resistance (ohms) v ce = 30 v i c = 10 x i ces i c i ces i c = 2 x i ces (typical i ces values obtained from figure 12)
TIP31, TIP31a, TIP31b, TIP31c, (npn), tip32, tip32a, tip32b, tip32c, (pnp) http://onsemi.com 6 package dimensions to?220 case 221a?09 issue aa notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 ??? 1.15 ??? z ??? 0.080 ??? 2.04 b q h z l v g n a k f 123 4 d seating plane ?t? c s t u r j style 1: pin 1. base 2. collector 3. emitter 4. collector on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 TIP31a/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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